elektronische bauelemente MMBT493 npn silicon general purpose transistor 01-june-2002 rev. a page 1 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. top view a l c b d g h j f k e 1 2 3 1 2 3 1 base 2 emitte r collector 3 rohs compliant product a suffix of ?-c? specifies halogen & lead-free features medium power transistor marking 493 absolute maximum ratings (t a = 25c unless otherwise noted) parameter symbol ratings unit collector-base voltage v cbo 120 v collector-emitter voltage v ceo 100 v emitter-base voltage v ebo 5 v collector current -continuous i c 1 a collector power dissipation p d 250 mw junction & storage temperature t j , t stg 150, -55~150 c electrical characteristics (t a = 25c unless otherwise noted) parameter symbol min. max. unit test conditions collector-base breakdown voltage v (br)cbo 120 - v i c =100 a, i e =0 collector-emitter breakdown voltage v (br)ceo * 100 - v i c =10ma, i b =0 emitter-base breakdown voltage v (br)ebo 5 - v i e =100 a, i c =0 collector cut-off current i cbo - 0.1 a v cb =100v, i e =0 collector cut-off current i ces - 0.1 a v ce =100v, i e =0 emitter cut-off current i ebo - 0.1 a v eb =4v, i c =0 h fe(1) * 100 - v ce =10v, i c =1ma h fe(2) * 100 300 v ce =10v, i c =250ma h fe(3) * 60 - v ce =10v, i c =500ma dc current gain h fe(4) * 20 - v ce =10v, i c =1000ma v ce(sat) * - 0.3 v i c =500ma, i b =50ma collector-emitter saturation voltage v ce(sat) * - 0.6 v i c =1000ma, i b =100ma v be(sat) * - 1.15 v i c =1000ma, i b =100ma base-emitter saturation voltage v be(on) * - 1 v v ce =10v, i c =1000ma transition frequency f t 150 - mhz v ce = 10v, i c = 50ma, f = 100mhz output capacitance c ob - 10 pf v cb = 10v, f = 1.0mhz, i e = 0 *pulse test: pulse width Q 300 s, duty cycle Q 2% sot-23 millimete r millimete r ref. min. max. ref. min. max. a 2.80 3.00 g 0.10 ref. b 2.25 2.55 h 0.55 ref. c 1.20 1.40 j 0.08 0.15 d 0.90 1.15 k 0.5 ref. e 1.80 2.00 l 0.95 typ. f 0.30 0.50
elektronische bauelemente MMBT493 npn silicon general purpose transistor 01-june-2002 rev. a page 2 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
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